SiC/GaN ÀÀ¿ë±â¼ú ¹× Æò°¡
- ¹ÝµµÃ¼(ÄÚ½ºÇÇ)
¸ðÁýºÎ¹® ¹× ÀÚ°Ý¿ä°Ç
¸ðÁýºÎ¹® | ´ã´ç¾÷¹« | ÀÚ°Ý¿ä°Ç | Àοø |
---|---|---|---|
SiC/GaN ÀÀ¿ë±â¼ú ¹× Æò°¡ |
[´ã´ç¾÷¹«] ¤ýWide band gap power device (GaN/SiC) ÀÀ¿ë±â¼ú ¹× Æò°¡ - Wafer/PKG level switching/application setup ¹× Æò°¡ - Application¸¦ Æ÷ÇÔÇÑ Àü¹ÝÀûÀÎ reliability setup ¹× Æò°¡ °á°ú¸¦ ÅëÇÑ °³¼± ¹æÇâ Á¦¾È/µµÃâ |
[ÀÚ°Ý¿ä°Ç] ¤ýWBG ¼ÒÀÚ application Ư¼ºÆò°¡ °³¹ß °æ·Â 6³â ÀÌ»ó~ - ¼®»ç : 4³â ÀÌ»ó~ - ¹Ú»ç ÇÐÀ§ÀÚ °æ·Â ¹«°ü [¿ì´ë»çÇ×] ¤ýWBG device ÀÀ¿ëȸ·Î Á¦ÀÛ/Æò°¡ °æÇè ¤ýWBG Æ¯È topology¸¦ ÀÌ¿ëÇÑ Àü·Âº¯È¯ board ¼³°è ¤ýSiC/GaN speicfic test ¸¦ ÀÌ¿ëÇÑ ¼ÒÀÚ Æò°¡ °æÇè ¤ýSiC/GaN device ±¸Á¶ ¹× °øÁ¤ Àü¹®Áö½Ä ¤ý¹Ú»çÇÐÀ§ º¸À¯ÀÚ [±âŸ»çÇ×] ¤ýä¿ë±¸ºÐ: Á¤±ÔÁ÷ ¤ý¿¬ºÀ: ÈíÁ·ÇÏ°Ô ÇùÀÇ/ ¿ª·® ¿ì¼öÇϽźи¸ ¤ý¹®ÀÇ: ***-****-****/ ******@*******.*** |
0 ¸í |
±Ù¹«Á¶°Ç
ÀüÇü´Ü°è ¹× Á¦Ãâ¼·ù
Á¢¼ö¹æ¹ý
±âŸ À¯ÀÇ»çÇ×