SiC/GaN FA
- ¹ÝµµÃ¼(ÄÚ½ºÇÇ)
¸ðÁýºÎ¹® ¹× ÀÚ°Ý¿ä°Ç
¸ðÁýºÎ¹® | ´ã´ç¾÷¹« | ÀÚ°Ý¿ä°Ç | Àοø |
---|---|---|---|
SiC/GaN FA |
[´ã´ç¾÷¹«] ¤ýWide band gap power device (GaN/SiC) ¼ÒÀç/±¸Á¶/¼ÒÀÚ¿¡ ´ëÇÑ Àü¹ÝÀûÀÎ failure analysis ¤ýWafer/PKG level¿¡¼ÀÇ ½Å·Ú¼º fail Á¦Ç°¿¡ ´ëÇÑ Defect analysis, RCA(Root Cause Analysis)¸¦ ÅëÇØ °³¼± ¹æÇâ Á¦¾È/µµÃâ |
[ÀÚ°Ý¿ä°Ç] ¤ýÇзÂ: 4³â Çлç ÀÌ»ó ¤ýWBG ¼ÒÀÚ ½Å·Ú¼º ¶Ç´Â FA ¾÷¹« °æ·Â 5³â ÀÌ»ó, - ¼®»ç3³â ÀÌ»ó~ - ¹Ú»ç ÇÐÀ§ÀÚ´Â °æ·Â ¹«°ü [¿ì´ë»çÇ×] ¤ýWBG Àü·Â¼ÒÀÚ FA ÁøÇà ¹× °á°ú ºÐ¼® °æÇèÀÚ ¤ýWBG ¼ÒÀÚ ½Å·Ú¼º ºÐ¼® ¹× lifetime ¿¹Ãø °æÇèÀÚ ¤ýWBG device Wafer/PKG Æò°¡ °æÇèÀÚ ¤ýSiC/GaN device ±¸Á¶ ¹× °øÁ¤ Àü¹® Áö½Ä ¤ý¹Ú»çÇÐÀ§ º¸À¯ÀÚ [±âŸ»çÇ×] ¤ýä¿ë±¸ºÐ: Á¤±ÔÁ÷ ¤ý¿¬ºÀ: ÈíÁ·ÇÏ°Ô ÇùÀÇ/ ¿ª·® ¿ì¼öÇϽźи¸ ¤ý¹®ÀÇ: ***-****-****/ ******@*******.*** |
0 ¸í |
±Ù¹«Á¶°Ç
ÀüÇü´Ü°è ¹× Á¦Ãâ¼·ù
Á¢¼ö¹æ¹ý
±âŸ À¯ÀÇ»çÇ×